发明名称 |
HIGH EFFICIENCY SEMICONDUCTOR PHOTO DEVICE STRUCTURE HAVING ELECTRON TUNNELING BARRIER LAYER AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A high efficiency semiconductor photo device structure having an electron tunneling barrier layer and a manufacturing method thereof are provided to improve optical extraction efficiency by inserting an electron tunneling barrier between a N-type GaN layer and a multi quantum well. CONSTITUTION: An electron tunneling barrier layer(232) is formed on an N-type nitride semiconductor layer(AlxInyGa1-x-yNs (0≤x≤1, 0≤y≤1, 0≤x+y≤1)). A multiple quantum well(233) is formed on the ETB layer as an active layer. A P-type nitride semiconductor layer(235) is formed on the multiple quantum well. The electron tunneling barrier layer improves the recombination of holes which are injected from a P-type nitride semiconductor layer into the multiple quantum well. [Reference numerals] (210) Substrate; (220) Template layer; (230) LED layer; (234) Removable
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申请公布号 |
KR20130017112(A) |
申请公布日期 |
2013.02.20 |
申请号 |
KR20110079338 |
申请日期 |
2011.08.10 |
申请人 |
KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION |
发明人 |
NAM, OK HYUN;LEE, SEONG HUN;KIM, MIN CHEOL;LEE, KYUNG JAE |
分类号 |
H01L33/04;H01L33/06 |
主分类号 |
H01L33/04 |
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