| 摘要 |
PURPOSE: A method for processing the surface of an epitaxial wafer is provided to obtain an oxide layer with uniform and stable thickness by forming an oxide layer on an epitaxial surface using ozone. CONSTITUTION: An epitaxial wafer is prepared(S100). The epitaxial wafer is inputted to a chamber(S200). An ozone generator generates ozone(S300). An oxide layer is formed on the surface of the epitaxial wafer by spraying ozone to the chamber(S400). [Reference numerals] (S100) Step of preparing an epitaxial wafer; (S200) Step of inputting an epitaxial wafer to a chamber; (S300) Step of generating ozone; (S400) Step of forming an oxide layer on the surface of an epitaxial wafer |
