INGAAS NANOWIRE ARRAY GROWN BY VOLMER-WEBER GROWTH MODE ON PATTERNED SILICON (111) SUBSTRATE BY LARGE-AREA NANOIMPRINT METHOD

摘要

PURPOSE: An InGaAs(indium gallium arsenide) nanowire is provided to have excellent optical/electrical property without misfit dislocation by growing with volmer-weber method on silicon board patterned by a large area nano imprint method. CONSTITUTION: A manufacturing method of an InGaAs nanowire comprises the following steps. SiO2 is deposited on silicon substrate(111). On SiO2 layer, the nano hole pattern is formed. InxGa1-xAs nano array is perpendicularly grown along the form of nano hole pattern. The SiO2 layer is 10-300nm thickened by plasma enhanced chemical vapor deposition(PECVD). The nano hole pattern is formed by the nano imprint lithography method. The nano hole comprises the diameter of 50-500nm and the distance between the holes is 400-1000nm. The InxGa1-xAs nano wire is grown by the metal-organic chemical vapor deposition(MOCVD) on the patterned silicon substrate. [Reference numerals] (111) Silicon substrate