发明名称 |
Field effect transistor with conduction band electron channel and uni-terminal response |
摘要 |
A uni-terminal transistor device is described. In one embodiment, an n-channel transistor comprises a first semiconductor layer having a discrete hole level H 0 ; a second semiconductor layer having a conduction band minimum E C2 ; a wide bandgap semiconductor barrier layer disposed between the first and the second semiconductor layers; a gate dielectric layer disposed above the first semiconductor layer; and a gate metal layer disposed above the gate dielectric layer and having an effective workfunction selected to position the discrete hole level H 0 below the conduction band minimum E c2 for zero bias applied to the gate metal layer and to obtain n-terminal characteristics. |
申请公布号 |
EP2355158(A3) |
申请公布日期 |
2013.02.20 |
申请号 |
EP20110000710 |
申请日期 |
2011.01.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
PASSLACK, MATTHIAS |
分类号 |
H01L29/778;H01L29/201;H01L29/205;H01L29/43;H01L29/51 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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