METHOD FOR COATING A SUBSTRATE INSIDE A VACUUM CHAMBER BY MEANS OF PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION
摘要
The invention relates to a device for depositing a layer on a substrate (2) inside a vacuum chamber (1) by means of plasma-assisted chemical vapor deposition, comprising at least one inlet (3) for introducing at least one gas into the vacuum chamber (1) and at least one magnetron (4) equipped with a target (5; 9) for producing a plasma, wherein the target (5; 9) has a temperature of at least 300 °C at least in one region during the deposition of the layer.
申请公布号
EP2558609(A1)
申请公布日期
2013.02.20
申请号
EP20110713196
申请日期
2011.04.07
申请人
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.