| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a step due to slurry by forming an etch stop layer and a capping layer on the upper side of an insulation layer. CONSTITUTION: An insulation layer(18) is formed on the upper side of a substrate(11) including a buried gate(15) and a junction region(17). An etch stop layer(22) and a capping layer(23) are laminated on the insulation layer. The insulation layer is planarized using the etch stop layer as a target. A line type first mask pattern is formed on the capping layer. A hole type second mask pattern(25) is formed on the insulation layer including the capping layer. The linewidth of the second mask pattern is narrower than the linewidth of the first mask pattern. An open part(26) to expose the junction region is formed by etching the insulation layer using the second mask pattern as an etch barrier. [Reference numerals] (AA) Cell area; (BB) Peripheral area
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