| 摘要 |
<p>The solid-state imaging device 1 includes an imaging photodetecting section 10, a trigger photodetecting section 20, a row selection section 30, a column selection section 40, a holding section 50, a pixel data output section 60, a trigger data output section 70, and a control section 80. In a shutter method of the solid-state imaging device 1, the start of a charge accumulation period is common to all rows of the imaging photodetecting section 10, while the end of the charge accumulation period varies row by row of the imaging photodetecting section 10, and there is a signal readout period subsequent to the charge accumulation period in each row of the imaging photodetecting section 10. Accordingly, a solid-state imaging device that can perform high-accuracy imaging even when the incident period of light to be imaged is considerably short is realized.</p> |
