发明名称 |
GROWTH SUBSTRATE, LIGHT EMITTING DIODE AND PACKAGE OF THEREOF |
摘要 |
PURPOSE: A growth substrate, a light emitting device and a light emitting device package are provided to maximize the amount of optical extraction by forming a concavo-convex part at the side of a light emitting structure. CONSTITUTION: A first trench(14) has a first depth and is formed on a body(12). The first trench defines a single chip region. A non-growth layer(16) covers the front surface of the first trench. A light emitting structure is grown on a light emitting structure growth substrate which includes Al2O3, SiC, GaAs, or GaN. A first electrode layer is formed on the light emitting structure. |
申请公布号 |
KR20130017360(A) |
申请公布日期 |
2013.02.20 |
申请号 |
KR20110079741 |
申请日期 |
2011.08.10 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
PARK, KYUNG WOOK;SONG, DA JEONG;JEON, YOUNG HYUN;JEONG, BYUNG HAK |
分类号 |
H01L33/20;H01L33/22 |
主分类号 |
H01L33/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|