| 摘要 |
<p>PURPOSE: A semiconductor device and a fabrication method thereof are provided to perpendicularly form the magnetization direction of a pinned layer and to improve the stability of a magnetoresistive memory element. CONSTITUTION: The magnetization direction of a pinned layer(11) is fixed in a first direction. A tunnel insulating layer(12) is formed on the pinned layer. A free layer(13) is formed on the tunnel insulating layer. The magnetization direction of the free layer is changed. A magnetization fixing induction layer(15) surrounds the pinned layer. The magnetization direction of the magnetization fixing induction layer is opposite to a second direction.</p> |
