发明名称 PLASMA PROCESSING APPARATUS AND PROCESSING SYSTEM
摘要 PURPOSE: A plasma processing apparatus capable of simultaneously executing a uniform plasma process on multiple articles to be processed and a processing system thereof are provided to perform impedance correction for each electrode pair using an impedance correction tool. CONSTITUTION: Each article to be processed of more than two lower electrodes(10a-10e) is loaded on a loading surface. Each of upper electrodes(11a-11e) forms an electrode pair with the lower electrodes. A ground line(13a-13e) is connected to one side of a facing surface facing the loading surface of each upper electrode and the central part of the opposite side surface. A high frequency supply line(14a-14e) is connected to a different side which is not connected to the ground line. A shield member(12a-12f) accommodates the ground line and the high frequency supply line inside a process chamber(31a). An impedance correction tool(15a-15e) is installed at each of the ground lines. [Reference numerals] (AA,BB) To an exhaust apparatus(9)
申请公布号 KR20130018360(A) 申请公布日期 2013.02.20
申请号 KR20130012124 申请日期 2013.02.04
申请人 TOKYO ELECTRON LIMITED 发明人 TANAKA SEIJI
分类号 H05H1/46;H01L21/3065 主分类号 H05H1/46
代理机构 代理人
主权项
地址