METHOD OF FABRICATING RESISTANCE VARIABLE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a variable resistance memory device is provided to improve the integration of a semiconductor device by supplying a source line pattern used for a common source line of adjacent gates. CONSTITUTION: A device isolation layer(101) is formed on a substrate. First source and drain regions are formed between gate line structures(GL) and conductive separation patterns(Cl). Second source and drain regions are formed between the gate line structures. The gate line structures are buried in the substrate by interposing the first source and drain regions. Bottom contact plugs are formed on the first source and drain regions. Variable resistance structures are electrically connected to the first source and drain regions through the bottom contact plugs.