| 摘要 |
PURPOSE: A sputtering device is provided to improve the density of a deposition film deposited on a target deposition object as mean free paths of metallic substances discharged from a target by controlling the sputtering pressure of a sputtering space. CONSTITUTION: A sputtering device deposits deposition substances discharged from a target on a target deposition object. The sputtering pressure formed in between the target and the target deposition object is 1.34 x 10-1Pa to 6.70 x 10-2Pa. The sputtering device faces to the target across a backing plate contacting to the target and includes a magnetic material contacting to the backing plate. [Reference numerals] (AA) Deposition density(g/cm^3); (BB) Sputtering pressure(Pa)
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