发明名称 Quantum cascade laser
摘要 A quantum cascade laser includes a substrate having a first surface, a second surface opposite the first surface, and a recess provided in the second surface; a semiconductor region provided on the first surface of the substrate; a ridge portion extending in one direction on the semiconductor region; a first electrode provided along the ridge portion; and a second electrode provided on the second surface of the substrate. Furthermore, the semiconductor region includes a first cladding layer of n-type, a core layer, and a second cladding layer of n-type stacked in that order. The recess is provided at a position corresponding to the ridge portion in the second surface of the substrate, and the second electrode is provided in the recess.
申请公布号 US8379683(B2) 申请公布日期 2013.02.19
申请号 US201213442974 申请日期 2012.04.10
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;HASHIMOTO JUN-ICHI;TAWA KATSUHISA 发明人 HASHIMOTO JUN-ICHI;TAWA KATSUHISA
分类号 H01S3/13;H01S3/00;H01S5/00 主分类号 H01S3/13
代理机构 代理人
主权项
地址