发明名称 System and method for manufacturing polycrystal silicon
摘要 A polycrystal silicon manufacturing apparatus and a method of manufacturing polycrystal silicon using the same are disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a first pressure sensor configured to measure a pressure of a first area in the reaction pipe; a second pressure sensor configured to measure a pressure of a second area in the reaction pipe; and a particle outlet configured to exhaust polycrystal silicon formed in the reaction pipe outside, when a difference between a first pressure measured by the first pressure sensor and a second pressure measured by the second pressure sensor is a reference pressure value or more.
申请公布号 US8377208(B2) 申请公布日期 2013.02.19
申请号 US201113247587 申请日期 2011.09.28
申请人 SILICONVALUE LLC.;JUNG YUNSUB;KIM KEUNHO;YOON YEOKYUN;KIM TED 发明人 JUNG YUNSUB;KIM KEUNHO;YOON YEOKYUN;KIM TED
分类号 C23C16/00;B01J8/18;C01B33/02;C23C16/24;C23C16/442;G05D9/00;G05D16/00 主分类号 C23C16/00
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