| 发明名称 |
Semiconductor device having a GaN-based semiconductor layer doped with Fe |
| 摘要 |
A semiconductor device includes: a semiconductor layer made of Fe-doped GaN; a first buffer layer that is provided on the semiconductor layer so as to contact an upper surface of the semiconductor layer and is made of AlN or AlxGa1-xN (0.4<x<1); and an operating layer that is provided on the first buffer layer and is made of a GaN-based semiconductor.
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| 申请公布号 |
US8378388(B2) |
申请公布日期 |
2013.02.19 |
| 申请号 |
US20100731621 |
申请日期 |
2010.03.25 |
| 申请人 |
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.;YOKOYAMA MITSUNORI |
发明人 |
YOKOYAMA MITSUNORI |
| 分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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