发明名称 |
Uniformity of a scanned ion beam |
摘要 |
One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.
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申请公布号 |
US8378313(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US201113077112 |
申请日期 |
2011.03.31 |
申请人 |
AXCELIS TECHNOLOGIES, INC.;EISNER EDWARD C.;RAY ANDY;VANDERBERG BO H. |
发明人 |
EISNER EDWARD C.;RAY ANDY;VANDERBERG BO H. |
分类号 |
H01J3/26;H01J37/147 |
主分类号 |
H01J3/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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