发明名称 |
Near-infrared imaging sensor |
摘要 |
A near-infrared imaging sensor according to the present invention includes a photodiode array sensitive to light with a wavelength of 1.2 to 3 μm and a multiplexer including a signal readout circuit. The near-infrared imaging sensor is contained in a housing and is vacuum-sealed. The housing includes a main body section and a lid covering the main body section. The lid is made of a material transparent to light with a wavelength of 1.2 to 3 μm.
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申请公布号 |
US8378300(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US20100689550 |
申请日期 |
2010.01.19 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;INADA HIROSHI;NAGAI YOUICHI |
发明人 |
INADA HIROSHI;NAGAI YOUICHI |
分类号 |
G01J5/02 |
主分类号 |
G01J5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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