发明名称 Near-infrared imaging sensor
摘要 A near-infrared imaging sensor according to the present invention includes a photodiode array sensitive to light with a wavelength of 1.2 to 3 μm and a multiplexer including a signal readout circuit. The near-infrared imaging sensor is contained in a housing and is vacuum-sealed. The housing includes a main body section and a lid covering the main body section. The lid is made of a material transparent to light with a wavelength of 1.2 to 3 μm.
申请公布号 US8378300(B2) 申请公布日期 2013.02.19
申请号 US20100689550 申请日期 2010.01.19
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;INADA HIROSHI;NAGAI YOUICHI 发明人 INADA HIROSHI;NAGAI YOUICHI
分类号 G01J5/02 主分类号 G01J5/02
代理机构 代理人
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