发明名称 OUTPUT DRIVING CIRCUIT AND TRANSISTOR OUTPUT CIRCUIT
摘要 PURPOSE: An output driving circuit and a transistor output circuit are provided to stably operate when a high voltage between a source-drain breakdown voltage and a gate-source breakdown voltage is applied to a gate of an output transistor. CONSTITUTION: A reference voltage generating unit(110) generates a reference voltage. A constant voltage difference is between the reference voltage and a high voltage power source. A level shift unit(130) includes a transistor latch and turns off a first transistor by applying the high voltage power source to the first transistor of a driving circuit or drives the first transistor with the decreased gate potential. A driving circuit unit(150) includes the first transistor and the second transistor. The first transistor is driven according to the control of the level shift unit and applies the high voltage power source to the gate of the output transistor. The second transistor is driven by reducing the potential of the gate of the output transistor. A withstand voltage protection unit(170) includes a first withstand voltage protection unit and a second withstand voltage protection unit.
申请公布号 KR20130016956(A) 申请公布日期 2013.02.19
申请号 KR20110079171 申请日期 2011.08.09
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 HEO, CHANG JAE
分类号 G05F3/02;G05F3/24 主分类号 G05F3/02
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