发明名称 |
Semiconductor device including image sensor |
摘要 |
A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. When the off-state current of a thin film transistor including an oxide semiconductor layer is set to 1×10−13 A or less and the thin film transistor is used as a reset transistor and a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.
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申请公布号 |
US8378391(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US20100938400 |
申请日期 |
2010.11.03 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KOYAMA JUN;YAMAZAKI SHUNPEI |
发明人 |
KOYAMA JUN;YAMAZAKI SHUNPEI |
分类号 |
H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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