发明名称 |
Group III nitride single crystal and method of its growth |
摘要 |
Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal (3) inside a crystal-growth vessel (11), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (11). Employing the crystal-growth vessel (11) makes it possible to discharge from 1% to 50% of a source gas (4) inside the crystal-growth vessel (11) via the pores in the porous body to the outside of the crystal-growth vessel (11).
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申请公布号 |
US8377204(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US20060305001 |
申请日期 |
2006.06.16 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;MIYANAGA MICHIMASA;MIZUHARA NAHO;FUJIWARA SHINSUKE;NAKAHATA SEIJI;NAKAHATA HIDEAKI |
发明人 |
MIYANAGA MICHIMASA;MIZUHARA NAHO;FUJIWARA SHINSUKE;NAKAHATA SEIJI;NAKAHATA HIDEAKI |
分类号 |
C30B23/00;B32B5/16 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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