发明名称 |
MOS-gated power devices, methods, and integrated circuits |
摘要 |
MOS-gated devices, related methods, and systems for vertical power and RF devices including an insulated trench and a gate electrode. A body region is positioned so that a voltage bias on the gate electrode will cause an inversion layer in the body region. Permanent electrostatic charges are included in said insulation material. A conductive shield layer is positioned above the insulated trench, to reduce parasitic capacitances.
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申请公布号 |
US8378416(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US20090626589 |
申请日期 |
2009.11.25 |
申请人 |
MAXPOWER SEMICONDUCTOR, INC.;DARWISH MOHAMED N.;ZENG JUN |
发明人 |
DARWISH MOHAMED N.;ZENG JUN |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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