发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A semiconductor structure having a cap layer formed over a metalized dielectric layer is formed by depositing manganese on the surface of the metalized dielectric layer. The deposited manganese serves as a first cap layer to remove oxidation on the surface of the metalized dielectric layer. The presence of oxidation on the surface of the metalized dielectric layer can be delirious for performance of a device constructed out of the semiconductor structure. A second cap layer is then formed by depositing silicon carbide or nitrogen enriched silicon carbide over the first cap layer.
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申请公布号 |
US8377822(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US20100784868 |
申请日期 |
2010.05.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;TSUMURA KAZUMICHI;USUI TAKAMASA |
发明人 |
TSUMURA KAZUMICHI;USUI TAKAMASA |
分类号 |
H01L23/52;H01L21/4763 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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