| 摘要 |
Disclosed is a method of fabricating a semiconductor device, including the steps of forming a diffusion preventing mask on a surface of a semiconductor substrate, applying a dopant diffusing agent containing a dopant of a first conductivity type or a second conductivity type onto the surface of the semiconductor substrate at a spacing from the diffusion preventing mask, and forming a dopant diffusion layer by diffusing the dopant from the dopant diffusing agent into the semiconductor substrate.
|
