发明名称 |
Method for fabricating SOI high voltage power chip with trenches |
摘要 |
A method of manufacturing a SOI high voltage power chip with trenches is disclosed. The method comprises: forming a cave and trenches at a SOI substrate; filling oxide in the cave; oxidizing the trenches, forming oxide isolation regions for separating low voltage devices at the same time; filling oxide in the oxidized trenches; and then forming drain regions, source regions and gate regions for a high voltage power device and low voltage devices. The process involves depositing an oxide layer overlapping the cave of the SOI substrate. A SOI high voltage power chip thus made will withstand at least above 700V voltage.
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申请公布号 |
US8377755(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US201013133886 |
申请日期 |
2010.09.07 |
申请人 |
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATIONTECHNOLOGY, CHINESE ACADEMY OF SCIENCES;CHENG XINHONG;WANG ZHONGJIAN;YU YUEHUI;HE DAWEI;XU DAWEI;XIA CHAO |
发明人 |
CHENG XINHONG;WANG ZHONGJIAN;YU YUEHUI;HE DAWEI;XU DAWEI;XIA CHAO |
分类号 |
H01L21/332 |
主分类号 |
H01L21/332 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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