发明名称 |
Nonvolatile memory devices having dummy cell and bias methods thereof |
摘要 |
Provided are nonvolatile memory devices and methods of operating thereof. The nonvolatile memory devices include: dummy cells connected to a dummy bit line; and a dummy bit line bias circuit providing a dummy bit line voltage to the dummy bit line during a program operation, wherein, due to the dummy bit line voltage, at least one of the dummy cells is programmed with a threshold voltage lower than the top programmed state and higher than an erased state during the program operation.
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申请公布号 |
US8379456(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US20100901605 |
申请日期 |
2010.10.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;PARK CHAN;KANG CHANGSEOK;CHANG SUNG-IL;PARK YOUNGWOO;SEL JONGSUN;PARK JINTAEK |
发明人 |
PARK CHAN;KANG CHANGSEOK;CHANG SUNG-IL;PARK YOUNGWOO;SEL JONGSUN;PARK JINTAEK |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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