发明名称 Semiconductor integrated circuit device
摘要 Efficient reduction in power consumption is achieved by combinational implementation of a power cutoff circuit technique using power supply switch control and a DVFS technique for low power consumption. A power supply switch section fed with power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in a DEEP-NWELL region formed over a semiconductor substrate. Another power supply switch section fed with another power supply voltage, a circuit block in which a power cutoff is performed by the power supply switch section, and a level shifter are formed in another DEEP-NWELL region formed over the semiconductor substrate. In this arrangement, there arises no possibility of short-circuiting between different power supplies via each DEEP-NWELL region formed over the semiconductor substrate.
申请公布号 US8379425(B2) 申请公布日期 2013.02.19
申请号 US20100714309 申请日期 2010.02.26
申请人 RENESAS ELECTRONICS CORPORATION;FUKUOKA KAZUKI;IGARASHI YASUTO;MORI RYO;YASU YOSHIHIKO;SASAKI TOSHIO 发明人 FUKUOKA KAZUKI;IGARASHI YASUTO;MORI RYO;YASU YOSHIHIKO;SASAKI TOSHIO
分类号 H02M1/00;G06F1/26 主分类号 H02M1/00
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