发明名称 BAFFLE, APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR TREATING THEREOF
摘要 PURPOSE: An apparatus of processing a baffle and a substrate and a processing method thereof are provided to improve process uniformity in substrate processing by uniformly and stably forming the flow of plasma in all parts of a processing chamber. CONSTITUTION: A substrate processing apparatus(30) comprises a processing chamber(100) and a plasma generator(200). A substrate processing process is performed in the processing chamber. The plasma generator produces plasma used for processing a substrate. The plasma generator provides the plasma to the processing chamber in down stream method. The plasma generator is combined with the processing chamber. The plasma generator includes a reactor(210), a gas injection port(220), and a plasma source(230).
申请公布号 KR101234596(B1) 申请公布日期 2013.02.19
申请号 KR20100136853 申请日期 2010.12.28
申请人 发明人
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
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