发明名称 Data storage device, memory system, and computing system using nonvolatile memory device
摘要 Provided is a data storage device including two or more data storage areas including may have two or more (heterogeneous) types of nonvolatile memory cells. At least one of the data storage areas includes a plurality of memory blocks that are sequentially selected, and metadata are stored in the currently selected memory block. The memory blocks can be sequentially used and metadata can be stored in a uniformly-distributed manner throughout the data storage device. Therefore, separate merging and wear-leveling operations are unnecessary. Thus, it is possible to improve the lifetime and writing performance of a data storage device having two or more heterogeneous nonvolatile memories.
申请公布号 US8380945(B2) 申请公布日期 2013.02.19
申请号 US20080256275 申请日期 2008.10.22
申请人 SAMSUNG ELECTRONICS CO., LTD.;YE KYUNG-WOOK;CHO YUL-WON 发明人 YE KYUNG-WOOK;CHO YUL-WON
分类号 G06F12/00 主分类号 G06F12/00
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