| 摘要 |
PURPOSE: A transistor using semiconductor-superconductivity transition is provided to reduce a heat dissipation amount by transiting a 123-cuprate material by applying a voltage to the 123-cuprate material. CONSTITUTION: A first electrode(120) is formed on a substrate. A second electrode(130) is arranged to be separated from the first electrode. A semiconductor-superconductivity transition layer(110) is extended to the second electrode from the first electrode. A gate electrode is formed to be separated from the first electrode and the second electrode. A ferroelectric layer is arranged between the gate electrode and the semiconductor-superconductivity transition layer. |
