发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof using the same are provided to improve the reliability of an MTJ(Magnetic Tunneling Junction) device by preventing the side of the MTJ device from being exposed. CONSTITUTION: A first protection layer(12) is formed according to the shape of an MTJ device(11). An insulation layer(13) is formed on the first protection layer. A hole to expose the first protection layer is formed by selectively removing the insulation layer. A second protection layer is formed on the side of the hole not to expose the edge of the first protection layer exposed by the hole. The upper side of the MTJ device is exposed by removing the first protection layer using the second protection layer as a mask. A conductive pattern is formed in contact with an electrode formed on the upper side of the MTJ device by filling the hole with conductive materials.</p> |
申请公布号 |
KR20130016827(A) |
申请公布日期 |
2013.02.19 |
申请号 |
KR20110078972 |
申请日期 |
2011.08.09 |
申请人 |
SK HYNIX INC. |
发明人 |
PARK, JUNG WOO;PARK, GIL JAE;PARK, KI SEON |
分类号 |
G11C11/15;H01L21/8247;H01L27/115 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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