| 摘要 |
<p>PURPOSE: A method for forming a semiconductor device is provided to improve the overlap margin of a semiconductor substrate and a storage electrode by easily forming the lower area of a store electrode region. CONSTITUTION: An interlayer insulating film is formed on a semiconductor substrate including an active area(104) and an element isolation film(102). The interlayer insulating film is etched to expose both ends of the active area and form a preliminary store electrode region. A seed layer is formed in the bottom surface of the preliminary store electrode region. A nano rod is formed on the seed layer. A sacrificial dielectric film and an insulating layer are formed at both sides of the nano rod. The nano rod and the seed layer are removed to expose both ends of the active area and form the store electrode region.</p> |
