| 摘要 |
<p>PURPOSE: A silicon substrate manufacturing device with high productivity and surface quality and a manufacturing method thereof using a continuous casting method are provided to improve the quality of silicon substrates by optimizing processing parameters and applying blowing of inert gas. CONSTITUTION: A silicon substrate manufacturing device(100) comprises a silicon material feeding unit(110), a silicon melting unit(120), a silicon melt storage unit(130), a transfer substrate(140), and a silicon substrate forming unit(150). The silicon melting unit is installed at the bottom of the silicon material feeding unit and melts a silicon material to obtain silicon melt. The silicon melt storage unit receives and stores silicon melt from the silicon melting unit and ejects a predetermined thickness of silicon melt. The transfer plate transfers the ejected silicon melt. The silicon substrate forming unit cools the silicon melt to obtain a silicon substrate. The preheating temperature of the transfer plate is 700-1400°C, and the substrate transfer time after tapping is 0.5-3.5 seconds.</p> |
