发明名称 |
Semiconductor device, battery protection circuit and battery pack |
摘要 |
A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.
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申请公布号 |
US8378418(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US20100805965 |
申请日期 |
2010.08.26 |
申请人 |
FUJI ELECTRIC CO., LTD.;KITAMURA MUTSUMI;SUGI AKIO;FUJISHIMA NAOTO;MATSUNAGA SHINICHIRO |
发明人 |
KITAMURA MUTSUMI;SUGI AKIO;FUJISHIMA NAOTO;MATSUNAGA SHINICHIRO |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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