| 摘要 |
A non-volatile memory device includes a semiconductor substrate having a peripheral circuit region and a cell region, wherein the cell region of the semiconductor substrate is lower in height than the peripheral circuit region of the semiconductor substrate, a control gate structure disposed over the cell region of the semiconductor substrate and comprising a plurality of inter-layer dielectric layers that are alternately stacked with a plurality of control gate electrodes, a first insulation layer covering the cell region of the semiconductor substrate where the control gate structure is formed, a selection gate electrode disposed over the first insulation layer, and a peripheral circuit device disposed over the peripheral circuit region of the semiconductor substrate.
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