发明名称 |
Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloy |
摘要 |
In sophisticated transistor elements including a high-k gate metal stack, the integrity of the sensitive gate materials may be ensured by a spacer element that may be concurrently used as an offset spacer for defining a lateral offset of a strain-inducing semiconductor alloy. The cap material of the sophisticated gate stack may be removed without compromising integrity of the offset spacer by providing a sacrificial spacer element. Consequently, an efficient strain-inducing mechanism may be obtained in combination with the provision of a sophisticated gate stack with the required material integrity, while reducing overall process complexity compared to conventional strategies.
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申请公布号 |
US8378432(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US20100748992 |
申请日期 |
2010.03.29 |
申请人 |
GLOBALFOUNDRIES INC.;CARTER RICHARD;BEYER SVEN;TRENTZSCH MARTIN |
发明人 |
CARTER RICHARD;BEYER SVEN;TRENTZSCH MARTIN |
分类号 |
H01L21/02;H01L29/66 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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