发明名称 |
Methods of forming structures with a focused ion beam for use in atomic force probing and structures for use in atomic force probing |
摘要 |
Methods for forming structures to use in atomic force probing of a conductive feature embedded in a dielectric layer and structures for use in atomic force probing. An insulator layer is formed on the dielectric layer such that the conductive feature is covered. A contact hole penetrates from a top surface of the insulator layer through the insulator layer to the conductive feature. The contact hole is at least partially filled with a conductive stud that is in electrical contact with the conductive feature and exposed at the top surface of the insulator layer so as to define a structure. A probe tip of an atomic force probe tool is landed on a portion of the structure and used to electrically characterize a device structure connected with the conductive feature.
|
申请公布号 |
US8377722(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US20100703211 |
申请日期 |
2010.02.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;GOULET DAVID RAYMOND;LEPUSCHENKO WALTER VICTOR |
发明人 |
GOULET DAVID RAYMOND;LEPUSCHENKO WALTER VICTOR |
分类号 |
G01R31/26;H01L21/66 |
主分类号 |
G01R31/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|