| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve a breakdown voltage by forming a current path changing unit with a desirable depth. CONSTITUTION: A device region and an outer region are defined on a semiconductor substrate. An align trench(120) is formed in the outer region. A dummy trench(130) is formed in the device region. An epitaxial layer is formed in the dummy trench and on the upper side of the semiconductor substrate. A current path changing unit is formed in the epitaxial layer.</p> |
