| 摘要 |
<p>The present invention relates to a method of manufacturing a light emitting diode, and the light emitting diode manufactured thereby. The method according to the present invention includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode. The present invention allows for a method of manufacturing a nanoimprint mold that can be efficiently and economically formed for enhancing the light extraction efficiency of a light-emitting diode, a method of manufacturing a light-emitting diode, and a light-emitting diode using the nanoimprint module.</p> |
