| 摘要 |
<p>The vapor-deposition process for a CIGS thin-film solar cell according to the present invention comprises the steps of: forming a molybdenum (Mo) layer on a loaded substrate; sequentially forming a CIG layer and selenium (Se) and buffer layer on the upper part of the molybdenum layer; forming a zinc oxide (ZnO) layer on the upper side of the buffer layer; and forming an AZO (Aluminum Zinc Oxide) layer on the upper part of the zinc oxide (ZnO) layer, wherein the step of forming the molybdenum (Mo) layer through to the step of forming the AZO layer are carried out in a vacuum state by means of a vacuum chamber comprising a vacuum pump, with the aim of simplifying the vapor deposition process by carrying out the cell and module processing for the CIGS solar cell in an inline process in a vacuum state.</p> |
