| 发明名称 |
SOLUTION COMPOSITION FOR FORMING OXIDE THIN FILM AND ELECTRONIC DEVICE INCLUDING THE OXIDE THIN FILM |
| 摘要 |
A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.
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| 申请公布号 |
US2013036943(A1) |
申请公布日期 |
2013.02.14 |
| 申请号 |
US201213650819 |
申请日期 |
2012.10.12 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEON JONG-BAEK;KIM HYUN-JAE;LEE SANG-YOON;RYU MYUNG-KWAN;SHIN HYUN-SOO;PARK KYUNG-BAE;JEONG WOONG-HEE;KIM GUN-HEE;AHN BYUNG-DU |
| 分类号 |
C09D5/00 |
主分类号 |
C09D5/00 |
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