<p>Provided is a metalorganic chemical vapor deposition (MOCVD) apparatus. The MOCVD apparatus according to the present invention comprises: a reaction chamber having a chamber body defining an inner space having a certain volume and a chamber cover sealing the chamber body to maintain the airtightness of same; a susceptor which is rotatably arranged within the chamber body, and which has at least one pocket for receiving a wafer in the upper surface thereof; a cover member detachably arranged on an inner surface of the chamber cover to define a reaction space between the susceptor and the cover member, the cover member being made of a plurality of partition members coupled to each other; and a gas supply part supplying a reaction gas into the reaction space so that the reaction gas flows between the susceptor and the cover member.</p>
申请公布号
WO2013022127(A1)
申请公布日期
2013.02.14
申请号
WO2011KR05772
申请日期
2011.08.09
申请人
SAMSUNG ELECTRONICS CO., LTD.;RHEE, DO YOUNG;KIM, YOUNG SUN;KIM, SUNG TAE;HAN, SANG HEON;KIM, KI SUNG
发明人
RHEE, DO YOUNG;KIM, YOUNG SUN;KIM, SUNG TAE;HAN, SANG HEON;KIM, KI SUNG