MAGNETIC MEMORY DEVICE AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A magnetic memory device and a manufacturing method thereof are provided to improve a TMR(Tunnel Magneto Resistance) effect by forming a tunnel barrier using oxide between a free layer and a second pinned layer. CONSTITUTION: A first tunnel barrier is contacted with the surface of a first pinned layer(403). A free layer(407) is contacted with the surface of a first tunnel barrier. The free layer has a laminate structure of a first ferromagnetic layer, an oxide tunnel spacer, and a second ferromagnetic layer. A second tunnel barrier is contacted with the surface of the free layer. A second pinned layer(411) is contacted with the surface of the second tunnel barrier. [Reference numerals] (401) Seed layer; (403) First pinned layer; (405) First tunnel barrier; (407) Free layer; (409) Second tunnel barrier; (411) Second pinned layer; (413) Capping layer; (471) First ferromagnetic layer; (473) Tunnel spacer; (475) Second ferromagnetic layer