发明名称 LIGHT-EMITTING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a light-emitting device in which a plurality of kinds of circuits are formed on the same substrate, and a plurality of kinds of thin film transistors are provided so as to correspond to characteristics of the plural kinds of the circuits. <P>SOLUTION: As a thin film transistor for a pixel, an inverted coplanar thin transistor comprising an oxide semiconductor layer overlapping on a source electrode layer and a drain electrode layer is used. As a thin film transistor for a driver circuit, a channel-etched thin film transistor is used. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is formed at a position which overlaps with the light-emitting element which is electrically connected to the thin film transistor for a pixel. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013033998(A) 申请公布日期 2013.02.14
申请号 JP20120232672 申请日期 2012.10.22
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SAKAKURA MASAYUKI;OIKAWA YOSHIAKI;YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;TSUBUKI MASASHI;AKIMOTO KENGO;HOSOHANE MIYUKI
分类号 H01L51/50;G09F9/30;H01L21/336;H01L27/32;H01L29/786 主分类号 H01L51/50
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