发明名称 |
METHODS OF FORMING METAL OR METAL NITRIDE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES |
摘要 |
In a method of forming a metal or metal nitride pattern, a metal or metal nitride layer is formed on a substrate, and a photoresist pattern is formed on the metal or metal nitride layer. An over-coating composition is coated on the metal or metal nitride layer and on the photoresist pattern to form a capping layer on the photoresist pattern. The over-coating composition includes a polymer having amine groups as a side chain or a branch and a solvent. A remaining portion of the over-coating composition is removed by washing with a hydrophilic solution. The metal or metal nitride layer is partially removed using the capping layer and the photoresist pattern as an etching mask.
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申请公布号 |
US2013040448(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201213570812 |
申请日期 |
2012.08.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;YANG JOO-HYUNG;KANG YOOL;LEE HYUNG-RAE;SHIN KYU-SIK;KIM JAE-HO;LEE DONG-JUN |
发明人 |
YANG JOO-HYUNG;KANG YOOL;LEE HYUNG-RAE;SHIN KYU-SIK;KIM JAE-HO;LEE DONG-JUN |
分类号 |
H01L21/312;H01L21/336 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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