| 摘要 |
<p>A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed.</p> |
