| 摘要 |
<p>PURPOSE: A transparent conductive film and manufacturing method thereof are provided to improve transmittance by forming silicon dioxide(SiO2) thin film and/or silicon nitride(SiNx) thin film in the bottom surface of a crystalline ITO(Indium Tin Oxide) thin film. CONSTITUTION: A silicon nitride(SiNx) thin film is formed on one side of a transparent substrate film(100). An ITO thin film(300) is formed on the silicon nitride thin film. A silicon dioxide thin film is formed between the silicon nitride thin film and the ITO thin film.</p> |
