发明名称 THROUGH SUBSTRATE VIA WITH EMBEDDED DECOUPLING CAPACITOR
摘要 A method of manufacturing a semiconductor die having a substrate with a front side and a back side includes fabricating openings for through substrate vias on the front side of the semiconductor die. The method also includes depositing a first conductor in the through substrate vias, depositing a dielectric on the first conductor and depositing a second conductor on the dielectric. The method further includes depositing a protective insulator layer on the back side of the substrate covering the through substrate vias.
申请公布号 US2013040436(A1) 申请公布日期 2013.02.14
申请号 US201213654245 申请日期 2012.10.17
申请人 QUALCOMM INCORPORATED;QUALCOMM INCORPORATED 发明人 NOWAK MATTHEW MICHAEL;GU SHIQUN
分类号 H01L21/02 主分类号 H01L21/02
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