发明名称 |
THROUGH SUBSTRATE VIA WITH EMBEDDED DECOUPLING CAPACITOR |
摘要 |
A method of manufacturing a semiconductor die having a substrate with a front side and a back side includes fabricating openings for through substrate vias on the front side of the semiconductor die. The method also includes depositing a first conductor in the through substrate vias, depositing a dielectric on the first conductor and depositing a second conductor on the dielectric. The method further includes depositing a protective insulator layer on the back side of the substrate covering the through substrate vias.
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申请公布号 |
US2013040436(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201213654245 |
申请日期 |
2012.10.17 |
申请人 |
QUALCOMM INCORPORATED;QUALCOMM INCORPORATED |
发明人 |
NOWAK MATTHEW MICHAEL;GU SHIQUN |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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