发明名称 |
METHOD OF PRODUCING SILICON CARBIDE |
摘要 |
A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C. but not more than 2,600° C. The method is capable of producing high-purity silicon carbide simply and at a high degree of productivity, and is capable of simply producing a silicon carbide molded item having a desired shape and dimensions.
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申请公布号 |
US2013039832(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201213624549 |
申请日期 |
2012.09.21 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;NATIONAL INSTITUTE FOR MATERIALS SCIENCE;NATIONAL INSTITUTE FOR MATERIALS SCIENCE;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
TANAKA HIDEHIKO;AOKI YOSHITAKA |
分类号 |
C01B31/36 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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