发明名称 |
SEMICONDUCTOR DEVICES HAVING FIN STRUCTURES AND FABRICATION METHODS THEREOF |
摘要 |
A method of fabricating semiconductor devices includes providing a semiconducting substrate. The method also includes defining a heavily doped region at a surface of the semiconducting substrate in at least one area of the semiconducting substrate, where the heavily doped region includes a heavily doped layer having a doping concentration greater than a doping concentration of the semiconducting substrate. The method also includes forming an additional layer of semiconductor material on the semiconducting substrate, the additional layer comprising a substantially undoped layer. The method further includes applying a first removal process to the semiconducting substrate to define an unetched portion and an etched portion, where the unetched portion defines a fin structure, and the etched portion extends through the additional layer, and then isolating the fin structure from other structures. |
申请公布号 |
WO2013022753(A2) |
申请公布日期 |
2013.02.14 |
申请号 |
WO2012US49531 |
申请日期 |
2012.08.03 |
申请人 |
HOFFMANN, THOMAS;THOMPSON, SCOTT, E.;SUVOLTA, INC. |
发明人 |
HOFFMANN, THOMAS;THOMPSON, SCOTT, E. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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