| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which suppresses the occurrence of deposits. <P>SOLUTION: A plasma processing apparatus according to one embodiment comprises: a processing container; a gas supply part; an introduction part; a holding member; and a focus ring. In a processing space defined by the processing container, plasma of a process gas supplied from the gas supply part is generated by energy introduced by the introduction part. The holding member for holding a processed substrate and the focus ring provided so as to enclose an end surface of the holding member are disposed in the processing space. A gap of 350 μm or smaller is defined between the end surface of the holding member and the focus ring. <P>COPYRIGHT: (C)2013,JPO&INPIT |
